Side-Channel Analysis for Detecting Protocol Tunneling

نویسندگان

  • Harakrishnan Bhanu
  • Jason M. Schwier
  • Ryan Craven
  • Richard R. Brooks
  • Kathryn Hempstalk
  • Daniele Gunetti
  • Christopher Griffin
چکیده

Protocol tunneling is widely used to add security and/or privacy to Internet applications. Recent research has exposed side channel vulnerabilities that leak information about tunneled protocols. We first discuss the timing side channels that have been found in protocol tunneling tools. We then show how to infer Hidden Markov models (HMMs) of network protocols from timing data and use the HMMs to detect when protocols are active. Unlike previous work, the HMM approach we present requires no a priori knowledge of the protocol. To illustrate the utility of this approach, we detect the use of English or Italian in interactive SSH sessions. For this example application, keystroke-timing data associates inter-packet delays with keystrokes. We first use clustering to extract discrete information from continuous timing data. We use discrete symbols to infer a HMM model, and finally use statistical tests to determine if the observed timing is consistent with the language typing statistics. In our tests, if the correct window size is used, fewer than 2% of data windows are incorrectly identified. Experimental verification shows that on-line detection of language use in interactive encrypted protocol tunnels is reliable. We compare maximum likelihood and statistical hypothesis testing for detecting protocol tunneling. We also discuss how this approach is useful in monitoring mix networks like The Onion Router (Tor).

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

متن کامل

Effects of the Channel Length on the Nanoscale Field Effect Diode Performance

Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...

متن کامل

Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

متن کامل

Novel biosensor for detecting Hemoglobin and its oxidation state based on nonreciprocity in a coupled waveguide system

We study the reflection of a tightly focused Gaussian beam off a near symmetric resonant tunneling structure comprising two identical coupled waveguides. The coupled waveguides are loaded on each side by a spacer layer and a high index prism. Reflection of a Gaussian beam from such a resonant structure is associated with beam distortion and even beam splitting. We start with the distortion of t...

متن کامل

Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Adv. Internet of Things

دوره 1  شماره 

صفحات  -

تاریخ انتشار 2011